Abstract
We show that oscillation of low temperature electron mobility μ can be obtained by applying an electric field F along the growth direction of the asymmetrically barrier delta doped AlxGa1-xAs parabolic double quantum well structure. The drastic changes in the subband Fermi energies and distributions of subband wave functions as a function of F yield nonmonotonic intra- and intersubband scattering rate matrix elements mediated by intersubband effects. The oscillatory enhancement of μ, which is attributed to the subband mobilities governed by the ionized impurity scattering, magnifies with increase in well width and decrease in height of the parabolic structure potential. The results can be utilized for nanoscale low temperature device applications.
Highlights
The parabolic quantum wells are interesting because of the inhomogeneity introduced through the design of the structure.[1,2,3,4,5] In recent years a great deal of attention has been generated in the study of electron transport properties of parabolic quantum well structures
We show that oscillation of low temperature electron mobility μ can be obtained by applying an electric field F along the growth direction of the asymmetrically barrier delta doped AlxGa1-x As parabolic double quantum well structure
An oscillatory enhancement of low temperature electron mobility is achieved in GaAs/AlGaAs parabolic double quantum well structure in presence of an external electric field
Summary
The parabolic quantum wells are interesting because of the inhomogeneity introduced through the design of the structure.[1,2,3,4,5] In recent years a great deal of attention has been generated in the study of electron transport properties of parabolic quantum well structures. Application of external electric field changes the potential profile of the quantum well structure.[13] the subband energy levels, wave functions and occupation of different subbands are changed. In the present work we theoretically show that oscillation of low temperature electron mobility μ can be achieved in a single side barrier delta doped parabolic double quantum well structure by applying an external electric field F along the growth direction of the structure, i.e., direction of the wells. Our results can be utilized for the performance enhancement of low-power and low temperature coupled quantum well devices
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