Oscillation efficiency of transfer electrons nitrid diodes

Abstract

The conducted analysis of ocsillation efficiency of nitride and their ternaty alloys allows to the followings conclusions: 1. On maximal ocsillation efficiency of nitride have InN, In 0,2 Ga 0,8 N, In 0,5 Ga 0,5 N, In 0,8 Ga 0,2 N, GaN is comparable with a GaAs (ocsillation efficiency ∼17–20% on low frequencies). 2. To tension of electric-field, at which a maximal size is ocsillation efficiency , on an order more exceed the analogical value of tension of electric-field for GaAs, and 250–1000 КV/sM make (for GaAs ( 15 КV/sm). 3. The account of random potential alloy in InGaN improves their power descriptions as compared to power descriptions of these compounds without the account of random potential alloy , ocsillation efficiency In 0.8 Ga 0.2 N and In 0.5 Ga 0.5 N as compared to INN on 30% higher (22% as compared to 16,43%) but at more high intensity of electric-field 4. The increase of temperature results in diminishing of mobility of electrons, diminishing of drift velosity of satiation of electrons, diminishing of ocsillation efficiency, diminishing of ODP, increase of threshold field and increase of intensity of electric-field, which a maximal value of maximal ocsillation efficiency is. 5. As compared to GaAs maximal ocsillation efficiency for nitrids observed at considerably large intensity of electric-field (from 250 КV/sm for InN to 1000 КV/sm for AlN). It puts under a large doubt possibility of work of diodes with the intervalley transfer of electrons on the basis of nitrides in the continuous mode (at permanent tension of feed on a diode). 6. On ocsillation efficiency , ocsillation threshold, intensity, which a maximal efficiency is at, GaAs remains the most optimum material for diodes with the intervalley transfer of electrons in the low frequency region of mm - wave range (50–100 GHz).