Abstract
In this report, surface morphologies modification and tensile strength improvement of single crystal silicon (SCS) microstructures using KrF excimer laser (248 nm) are presented. The sidewall roughness of dry-etched SCS beams was laser-treated by tilting the specimen. Harsh (〜4 J/cm^2) irradiation was successful due to localized annealing for free standing structures. The annealing was conducted on the tensile test samples of 120 μm long, 5 μm wide and thick. The averaged tensile strength of the laser-treated samples increased by 20 % compare to the as-fabricate samples. The sidewalls were smoothened and cross-sections were rounded by laser-annealing, which contributed for the improvement of tensile strength.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: The Proceedings of the Materials and Mechanics Conference
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
