Abstract
Silicon carbide (SiC) is a promising wide-bandgap semiconductor for future power electronics and system applications. However, high-efficient and ultra-precise dicing of SiC remains a challenge due to its extremely high hardness and brittleness. Investigation of the influence of laser processing parameters on cut quality of laser diced SiC wafer can improve efficiency and precision. In this work, 4H-SiC wafers were processed with multi-passes of a CO_2 continuous laser source. The influence of the laser power and scanning speed on the cut quality was evaluated. The experimental results showed that it was possible to obtain a smooth surface, with average arithmetic roughness as small as 0.56μm at effective speed as fast as 1.25mm/s.
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