Abstract
Advanced semiconductor products have structures with thickness and width in nanoscale. As the size of structures reduces to a nanometer level, a ratio of their surface to volume increase. In the present study, three-layered structure is analyzed using molecular dynamics (MD) method and the anisotropic elasticity theory. The analysis of stress and displacement near interface misfit dislocation in a two-phase anisotropic body is considering interface stress and interface elasticity. The stress and displacement distribution at the interface are compared the analysis considering the interface properties and the MD method.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: The Proceedings of the Materials and Mechanics Conference
Paper Title
Journal
Date
