Abstract
Cleaning using water is performed repeatedly to the wafers having bare copper interconnects in the fabrication process of integrated circuits. Even nm scale copper corrosion during the cleaning processes causes defects in the products. To understand the fundamental behavior of copper corrosion with water, copper surface was optically observed under laminar water flow using a microfluidic device, and it was found that dissolved oxygen has large effect on the copper corrosion. In this study, electrode potential was simultaneously observed with optical surface. Some observational results suggested drop of copper surface brightness below a certain electrode potential.
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