Abstract
Orthorhombic HoMnO3 films with a-axis orientations were prepared epitaxially on Nb-1.0wt%-doped SrTiO3 single crystal substrates by using the pulsed laser deposition technique to fabricate all-oxide heterojunctions. X-ray diffraction and atomic force microscopy were then used to characterize the films. The temperature dependent current-voltage measurement displayed diode-like rectifying behavior, and the forward current was perfectly fitted using the thermionic emission model. The ideality factor and built-in potential were suggested.
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