Abstract
We have succeeded in growing epitaxial CrO2(110) thin films on MgO(001) substrates with TiO2(110) buffer layers oxidizing from TiN(001) thin films. Thin TiN(001) epitaxial films grown by reactive dc-magnetron sputtering were transformed into TiO2(110) with an annealing process in low-pressure oxygen, followed by selective CrO2(110) growth on TiO2 buffer layers by chemical vapor deposition. X-ray diffraction experiments and scanning electron microscopic observation revealed that the epitaxial relationship of the sample is MgO(001)[110]∥TiO2(110)[001]∥CrO2(110)[001]. Both the CrO2(110) films and TiO2(110) buffer layers are orthogonally twinned and formed with small grains of CrO2 of 3–5 µm size and of TiO2 of sub-µm size.
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