Origins of Leakage Currents on Electrolyte-Gated Graphene Field-Effect Transistors

Abstract

Graphene field-effect transistors are widely used for development of biosensors. However, certain fundamental questions about details of their functioning are not fully understood yet. One of these questions is the presence of gate (leakage) currents in the electrolyte-gated configuration. Here, we report our observations considering causes of this phenomena on chemical vapor deposition (CVD) grown graphene. We observed that gate currents reflect currents that occur on the transistor surface similarly to a working electrode - counter electrode pair currents in an electrochemical cell. Gate currents are capacitive when the graphene channel is doped by holes and Faradaic when it is doped by electrons in field-effect measurements. The Faradaic current is attributed to a reduction of oxygen dissolved in the aqueous solution and its magnitude increases with each measurement. We employed cyclic voltammetry with a redox probe Fc(MeOH)2 to characterize changes of the graphene structure that are responsible for this activation. Collectively, our results reveal that through the course of catalytic oxygen reduction on the transistor's surface more defects appear.