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Abstract
In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio. The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR). The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement. The 1/f noise, measured by a custom-built noise spectroscopy system, shows that the power spectral density is a function of both doping ratio and temperature.
Highlights
Nanostructure semiconductor has been the focus of intense interest in recent years due to their extensive device application [1,2,3,4,5,6]
The results of this study demonstrated that the origins of 1/f noise in nanostructure inclusion pm-Si:H are the inhomogeneity and the defective structure in the films
The power spectral density of 1/f noise is inversely proportional to boron doping ratio, which is consistent with Hooge’s formula
Summary
Nanostructure semiconductor has been the focus of intense interest in recent years due to their extensive device application [1,2,3,4,5,6]. Gas doping ratio; h, film thickness (nm); NC, total number of carriers; TCR value-b (%), TCR = 1/R*(dR/dT)*100; resistivity at temperature of 300 K-R0 (MΩ); XC, crystal volume fraction (%); H, hydrogen content (%); void, void volume fraction (%).
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