Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy

K S Zhuravlev,Wen-Hao Chang,Yu G Galitsyn,K.A Konfederatova,T V Malin,Yen-Chun Chen,D V Gulyaev,V G Mansurov,I A Aleksandrov

doi:10.1088/1742-6596/864/1/012007

Abstract

We report original method of formation Ga(In)N/AlN quantum dots with low density by ammonia MBE on the (0001)AlN surface by using a decomposition process of Ga(In)N thin layer. Low density of quantum dots have been obtained in the range 107-109 cm-2. Single quantum dots photoluminescence lines corresponding to exciton and biexciton transitions were observed in micro-photoluminescence spectra.

Highlights

Formation of the wide band gap semiconductor GaN and into GaN (InGaN) quantum dots (QDs) in AlN matrices are important for fabrication of modern quantum devices such as single electron transistors, single and entangled photons sources, UV light emitting diodes, lasers and detectors, and etc
The GaN and InGaN QDs formation at the (0001)AlN surface usually implemented by using of the StranskiKrastanov growth mode [1], or by using the droplet epitaxy technique, where at first Ga(In) droplets are deposited onto the surface, and droplets are transformed into GaN (InGaN) 3D islands as result of the treatment in active nitrogen flux at temperatures about 700 °C [2]
In the present work we propose an original method for the low density GaN (InGaN) QDs formation by using an Ga(In) wetting layer on the (0001)AlN surface [4] to form controllable thin two dimensional (2D) GaN layer and subsequent decomposition of this layer

Summary

Introduction

Formation of the wide band gap semiconductor GaN and InGaN quantum dots (QDs) in AlN matrices are important for fabrication of modern quantum devices such as single electron transistors, single and entangled photons sources, UV light emitting diodes, lasers and detectors, and etc. The GaN and InGaN QDs formation at the (0001)AlN surface usually implemented by using of the StranskiKrastanov growth mode [1], or by using the droplet epitaxy technique, where at first Ga(In) droplets are deposited onto the surface, and droplets are transformed into GaN (InGaN) 3D islands as result of the treatment in active nitrogen flux (like NH3) at temperatures about 700 °C [2].

Results

Conclusion