Abstract
We discuss the origins of the transient gate current observed in the pseudo-MOS transistor in order to extract optional semiconductor parameters and its physical mechanisms. We analyze the time evolution of the gate current; its delay time is long even in quasi-static measurements at low gate voltages. Experiments show that the transient gate current characteristics are ruled by the generation-recombination process in the SOI layer and thermionic emission currents through the source and drain contacts. We address how the evaluate the generation-recombination lifetime in the SOI layer from the transient gate current behavior.
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