Abstract
By using the sputtering process, we made the IrMn based specular spin valve system, whose nano-oxide layer (NOL) was formed by natural oxidation. After thermal annealing at 305 and 410 °C, the thermal stability of the specular spin valve was observed. We found that the highest magnetoresistance (MR) ratio of about 12 % MR was produced after optimum annealing at 305 °C but the sample annealed at 410 °C also had a high MR ratio about 10 %. It is superior to other studies at this temperature. Based on the AES and XPS results, we could conclude that this enhanced thermal stability was due to the stable Cu layer between the pinned layer and free layer and to the NOL as a diffusion barrier for the Mn.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
