Abstract
Using Fourier-transform infrared absorption spectroscopy, we have studied the Si–H stretch mode on hydrogenated 6H-SiC(0001) and 3C-SiC(111). On 6H-SiC(0001) two signals at 2133.5 and 2128.0 cm−1 are observed. Their intensity ratio varies with sample preparation temperature. On 3C-SiC(111) essentially a single mode is observed at 2128.4 cm−1 at all temperatures. The origin of the two modes is explained in terms of different stacking arrangement below the surface. The possibility for a stacking rearrangement during the hydrogen treatment is discussed.
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