Abstract
Phase separation effects induced by spinodal decomposition taking place in cubic InxGa1−xN epitaxial layers were investigated by means of resonant Raman scattering (RRS) and X-ray diffractometry (XRD) experiments. The alloy epilayers were grown by radio-frequency plasma-assisted molecular beam epitaxy on GaAs (001) substrates. Ab initio theoretical calculation of the alloy phase diagram predicts the formation of In-rich phases in the layers which is confirmed by the RRS and XRD experiments. Photoluminescence observed at room temperature and 30K from the layers shows light emission in the blue–green region of the spectrum. RRS experiments demonstrated that the observed emission is directly linked to the In-rich separated phases (quantum dots) in the alloy. The results support the model that the origin of light emission in nitride-based light emitting diodes and laser diodes is related to quantum confinement effects taking place in quantum dots formed in the InGaN layers, active media of the devices.
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