Abstract
AbstractIn this work we have investigated the low-energy photoluminescence (PL) band with a peak between 0.8 eV and 1.0 eV for microcrystalline silicon films (μc-Si:H) grown under various growth conditions. At least four subbands are observed, the peaks of which are located near 0.80 eV, 0.87 eV, 0.92 eV, and 0.97 eV, respectively. It is suggested that the low-energy PL band basically arises from a superposition of these subbands, whose intensities strongly depend on deposition conditions, and thus its peak is determined by the sum of these subband intensities. From the results, it is suggested that the subband centered at 0.92 eV originates from defect-related radiative recombination in the amorphous phase rather than radiative band tail-to-tail transitions in the grain boundaries.
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