Abstract
The origin of the long-wavelength-side peak (peak B) in AlxGa1-xAs:Si light-emitting diodes is studied by investigating the relationships between radiative spectra and spatial distribution of the luminescence. Peak B originates from a recombination barrier existing in the P-Po boundary. Invariance of the energy of peak B independent of injection level can be explained by the dominance of the band-impurity (BI) transition in the P-Po boundary.
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