Abstract
We have investigated the lattice location of implanted in silicon. By means of emission channeling, three different lattice sites have been identified: ideal substitutional sites, displaced bond-centered sites and displaced tetrahedral interstitial sites. To assess the origin of the observed lattice sites we have compared our results to emission channeling studies on and and to Mössbauer spectroscopy experiments on , present in literature. The possible interpretation of several Mössbauer lines is discussed in the light of our new results on the lattice location. The conclusions are relevant for the microscopic understanding of some gettering techniques.
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