Abstract
This study examined the performance and photo-bias stability of double-channel ZnSnO/InZnO (ZTO/IZO) thin-film transistors. The field-effect mobility (μFE) and photo-bias stability of the double-channel device were improved by increasing the thickness of the front IZO film (tint) compared to the single-ZTO-channel device. A high-mobility (approximately 32.3 cm2/Vs) ZTO/IZO transistor with excellent photo-bias stability was obtained from Sn doping of the front IZO layer. First-principles calculations revealed an increase in the formation energy of O vacancy defects in the Sn-doped IZO layer compared to the IZO layer. This observation suggests that the superior photo-bias stability of the double-channel device is due to the effect of Sn doping during thermal annealing. However, these improvements were observed only when tint was less than the critical thickness. The rationale for this observation is also discussed based on the oxygen vacancy defect model.
Highlights
This study examined the performance and photo-bias stability of double-channel ZnSnO/InZnO (ZTO/ IZO) thin-film transistors
High-quality gate insulators, such as SiO2 or Al2O3, which were deposited by plasma-enhanced chemical vapor deposition (PECVD) or atomic layer deposition, were reported to effectively suppress the negative-bias illumination stress (NBIS) instability of the resulting metal oxide thin-film transistors (TFTs)
This result indicates that the number of free electron carriers (Nd) in the channel layer is proportional to the thickness of the front IZO layer
Summary
This study examined the performance and photo-bias stability of double-channel ZnSnO/InZnO (ZTO/ IZO) thin-film transistors. The field-effect mobility (mFE) and photo-bias stability of the double-channel device were improved by increasing the thickness of the front IZO film (tint) compared to the single-ZTO-channel device. First-principles calculations revealed an increase in the formation energy of O vacancy defects in the Sn-doped IZO layer compared to the IZO layer This observation suggests that the superior photo-bias stability of the double-channel device is due to the effect of Sn doping during thermal annealing. M etal oxide thin-film transistors (TFTs) have attracted considerable attention for applications in the active-matrix (AM) backplanes of liquid crystal displays (LCDs) and organic light-emitting diode (OLED) displays due to their high mobility, low production cost, and low-temperature processing capability[1,2,3,4] Despite these advantages, the high instability of metal oxide TFTs to photo bias is a critical issue that must be resolved to implement such TFTs in applications. These studies did not provide an in-depth theoretical explanation of the improvements
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