Abstract
Thermo- and optically stimulated processes are studied in reduced a-Al2O3 excited by X rays or UV light. It is shown that the 430 K TL peak and OSL band at 2.7 eV is caused by release of electrons from traps followed by recombination mainly at F+ centres and resulting in F centre emission. Traps responsible for the composite 430 K TL peak and induced 2.7 eV absorption band are caused by several kinds of defects of an electronic nature. Production of free electrons by selective UV excitation in the region of the absorption of F centres results in effective filling of all kinds of traps responsible for the 430 K TL peak, whereas free electrons and holes produced by X ray excitation competitively recombine via various localised electronic states, which results in lowered efficiency of the accumulation of the light sum and selective filling of different kinds of traps, responsible for the 430 K TL peak.
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