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Abstract
We investigate second harmonic generation from individual silicon nanowires and study the influence of resonant optical modes on the far field nonlinear emission. We find that the polarization of the second harmonic has a size-dependent behavior and explain this phenomenon by considering different surface and bulk nonlinear susceptibility contributions. We show that the second harmonic generation has an entirely different origin, depending on the nanowire diameter and on whether the incident illumination is polarized parallel or perpendicular to the nanowire axis. The results open perspectives for further geometry-based studies on the origin and control of second harmonic generation in nanostructures of high-refractive index centrosymmetric dielectrics.
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