Abstract
During epitaxial growth of silicon on Si(001) with MBE a rippled structure is formed on the surface. This rippled structure is akin to ripples observed in sand when water has flown over it. Experiments combining X-ray crystallography, optical microscopy and atomic force microscopy have been used to determine the microscopic details of the rippled structure. We find that the rippled structure is caused by correlated kink bunching and not by step bunching. A model is presented for the microscopic mechanism yielding deviations of the kink distribution from the equilibrium distribution, which are large enough to cause step-step interactions.
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