Abstract
NiO films grown on Pt and Nb:SrTiO3 (NSTO) substrates display filament-type and interface-type resistance switching (RS), respectively. The resistance retention studies show that these two different RSs also lead to distinct resistance evolutions. For Pt/NiO/Pt, both high and low resistance states have good retention property, demonstrating that the conducting filament is stable once it is formed. However, for Pt/NiO/NSTO/In, all resistance states show time-relaxation, and the relaxation trend depends on the polarity of the write bias. The resistive relaxation and nonvolatile features are attributed to the charge migration and electron trapping scenario, respectively.
Highlights
In this letter, p-type semiconductor NiO films15 grown on Pt and NSTO substrates present filament-type16 and interface-type resistance switching (RS),9 respectively
Pt top electrodes were sputtered onto the as-deposited NiO films through a shadow mask by DC sputtering, and Ohmic-contact In electrodes were pressed on the rough surface of NSTO.17
The current from Pt top electrodes to NiO films was defined as a positive direction
Summary
P-type semiconductor NiO films15 grown on Pt and NSTO substrates present filament-type16 and interface-type RS,9 respectively.
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