Abstract
Structural, chemical, and luminescence properties of Pr3+-doped HfSiOx layers fabricated by radio-frequency magnetron sputtering were examined as a function of annealing temperature. Phase separation between SiO2 and HfO2 as well as the location of Pr3+ dopants were investigated using atom probe tomography and transmission electron microscopy while optical properties of Pr3+ ions were studied using photoluminescence measurements. As a result, (i) we evidenced the location of the Pr3+ dopants in the HfO2 phase while the SiO2 phase was discovered to be free of these dopants, (ii) the HfO2 phase was identified to crystallize in the cubic phase until 1050 °C annealing, (iii) no Pr clusters were detected as function of annealing, and (iv) luminescence properties were discussed in regard to the location of Pr in the HfO2 cubic phase.
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