Abstract
In this article, we exhibit the influence of doping on nanoindentation-induced incipient plasticity in GaAs and InP crystals. Nanoindentation experiments carried out on a GaAs crystal show a reduction in contact pressure at the beginning of the plastic deformation caused by an increase in Si doping. Given that the substitutional Si defects cause a decrease in the pressure of the GaAs-I → GaAs-II phase transformation, we concluded that the elastic–plastic transition in GaAs is a phase-change-driven phenomenon. In contrast, Zn- and S-doping of InP crystals cause an increase in contact pressure at the elastic–plastic transition, revealing its dislocation origin. Our mechanical measurements were supplemented by nanoECR experiments, which showed a significant difference in the flow of the electrical current at the onset of plastic deformation of the semiconductors under consideration.
Highlights
This paper concerns InP and GaAs semiconductors, which are nowadays widely used in optoelectronics and are essential for the design and fabrication of numerous micro-devices [1]
It is widely known that an irreversible deformation of defect-free nano-volumes of metallic crystals is linked to the generation of dislocations [2], the case of semiconductors frequently involves phase transformations under the applied high-pressure [3]
This article presents nanoindentation-induced plasticity of a GaAs crystal as a phenomenon initiated by the GaAs-I → GaAs-II phase transformation
Summary
This paper concerns InP and GaAs semiconductors, which are nowadays widely used in optoelectronics and are essential for the design and fabrication of numerous micro-devices [1]. It is widely known that an irreversible deformation of defect-free nano-volumes of metallic crystals is linked to the generation of dislocations [2], the case of semiconductors frequently involves phase transformations under the applied high-pressure [3]. The data collected during the measurement can be presented in the form of a load–displacement (P-h) curve, which may show, on the loading part, a characteristic discontinuity. This is what is known as the “pop-in”, which reflects the sudden displacement of the indenter. In the case of a load-controlled experiment, the indenter penetrates the crystal under a constant load
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