Origin of mechanical strain sensitivity of pentacene thin-film transistors

Abstract

We report on bending strain-induced changes of the charge carrier mobility in pentacene organic thin-film transistors employing a combined investigation of morphological, structural, and electrical properties. The observed drain current variations are reversible if the deformation is below 2%. The morphology and structure of the active pentacene layer is investigated by scanning force microscopy and specular synchrotron X-ray diffraction, which show that bending-stress causes morphological rather than structural changes, modifying essentially the lateral spacing between individual pentacene crystallites. In addition, for deformations >2% the rupture of source and drain gold electrodes is observed. In contrast to the metal electrodes, the modification of the organic layer remains reversible for deformations up to 10%, which suggests the use of soft and flexible electrodes such as graphene or conducting polymers to be beneficial for future strain sensing devices.