Abstract
This paper analyzes the effect of high current under illumination stress (HCIS) in self-aligned amorphous indium gallium zinc oxide transistors with Al2O3 as high- $\kappa $ gate dielectric. A negative parallel threshold voltage $({V}_{T}$ ) shift with the appearance of hysteresis $(\Delta {V}_{{hys}})$ is observed after HCIS. In contrast to the double ionized oxygen vacancy ( $\text{V}_{\text O}^{\text 2+}$ ) theory, a peroxide donor theory based on ${ab~ initio}$ calculations is proposed to explain the degradation. Several methods are carried out to support the mechanism, including $\Delta {V}_{{hys}}$ generation, stress recovery behavior and capacitance-voltage ${(C-V)}$ measurements. A linear dependence between initial ${V}_{T}$ and negative ${V}_{T}$ shift is observed that further supports the peroxide theory. This work highlights the importance of evaluating the HCIS for oxide base semiconductor devices.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
