Abstract
为了探索CaCu 3 Ti 4 O 12 (CCTO)高介电性的起因机制, 利用固相反应工艺制备了CCTO陶瓷样品, 对其电学性质进行了研究. 在40 Hz~100 MHz测量范围内, 其室温下的介电频谱在1 MHz附近呈现一个类Debye型弛豫, 而高温介电频谱分别在1 kHz以下和1 MHz附近呈现两个类Debye型弛豫. 抛除表面层的同一个样品分别溅射金电极和烧渗银电极后升温测量其介电频谱, 发现低频介电弛豫对电极的金属类型高度敏感, 而高频介电弛豫与电极的金属类型无关, 与材料微观结构存在着密切的关系. 因此推断: CCTO低频介电弛豫起源于样品与电极之间的耗尽层效应, 而高频介电弛豫起源于高阻态的晶界与半导化的晶粒形成内部阻挡层电容效应.
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