Abstract
The atomic structure of the (1̄3̄3̄)CdTe/(2̄1̄1̄)GaAs interface is analyzed by high resolution transmission electron microscopy in order to elucidate the origin of the dual epitaxy in the growth of CdTe on (2̄1̄1̄)GaAs by molecular beam epitaxy. The analysis shows that the lattice mismatch at the interface is accommodated by a novel mechanism, which occurs with the combination of the 14.6% lattice mismatch between CdTe and GaAs and one wurtzite type bond sequence on the (2̄1̄1̄) substrate surface.
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