Abstract
Improving the $p$-type doping of wide-band-gap nitride and oxide semiconductors is important for optoelectronic applications such as lasers and LEDs, but is still challenging, as the underlying physics is still not fully understood. This study uses first-principles calculations to systematically investigate Mg and Be doping in nitride semiconductors, to unravel how chemical and strain effects influence the ionization states of these dopants. The results should have an impact on engineering $p$-type semiconductor devices.
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