Abstract
In this study 2000 Å FeTaN thin films are annealed at 150 °C in both longitudinal and transverse magnetic fields. Both anneals result in a decrease in HK, which is shown to be a result of interstitial N, however, the transverse anneal results in a 90° rotation of HK and a 33% larger decrease in the magnitude of HK as compared to the longitudinal anneal. Subsequent transverse field anneals show that HK is completely reversible in relatively short times at any temperature above 75 °C. Our results are consistent with the diffusion of interstitial N being responsible for the rotatable behavior of HK in FeTaN.
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