Abstract
Heteroepitaxial nucleation of diamond particles has been achieved on (001) β-SiC surfaces at pressures as low as 0.3 Torr using the bias-enhanced nucleation (BEN) method in an electron cyclotron resonance (ECR) microwave chemical vapor deposition (CVD) system. Oriented nucleation was possible over a length of 40 mm and under various pressures from 0.3 Torr to 2 Torr while increasing the negative bias voltage with the pressure. Moreover, it has been observed that, after pretreatment favorable for oriented nucleation, the substrate exhibited a noticeable stripe surface morphology.
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