Abstract
Stacking disorder has been found in layers of InP grown epitaxially on Ge by HCl transport. Electron diffraction patterns show streaks running along 〈1, 1, 1〉 directions of the reciprocal lattice. Nodes of greater intensity are found at reciprocal lattice points for twinned sphalerite and, frequently, also at half of the points for a wurtzite lattice. Comparison of the observed intensity distributions with calculations based on Jagodzinski's two-parameter model for growth faulting leads to the conclusion that the layers are inhomogeneous and contain regions of widely differing fault probabilities with structures which range between nearly perfect cubic and almost random stacking of close-packed planes. Use of the two-parameter model has led to some clarifications of and corrections to the literature; these subsidiary results are given in an appendix.
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