Abstract
Abstract Oriented growth of diamond on Si(100) substrates has been achieved by performing “thermal carburization” of the substrates prior to diamond growth by the d.c. plasma CVD method. Oriented diamond particles approximately 107 cm−2 in number density are observed together with randomly oriented diamond particles. It is confirmed by reflection high energy electron diffraction (RHEED) analysis that these oriented diamond particles are tilted with respect to the crystallographic axis of the substrate. RHEED and X-ray photoelectron spectroscopy analyses have revealed that epitaxial β-SiC layers with carbon-rich surfaces play an important role in the oriented growth of diamond on Si.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
