Oriented Bi 2Se 3 nanoribbons film: Structure, growth, and photoelectric properties

Abstract

Large-area oriented Bi 2Se 3 nanoribbons films were first synthesized via a simple chemical route. The aligned Bi 2Se 3 nanoribbons with a typical width of 120–300 nm, thickness of 40–70 nm and length of tens microns were grown on a metal Ti foil. Optical absorption experiments revealed that the Bi 2Se 3 nanoribbons are narrow-band semiconductors with a band gap E g ≈1.57 eV. The photoelectric properties of the oriented Bi 2Se 3 nanoribbons film was also investigated with a liquid junction photoelectrochemical solar cells system, and the highest short circuit photocurrent may be estimated at 1 mA cm −2.