Abstract
When one-dimensional nanostructures are epitaxially grown on a substrate a key goal is tocontrol the nanowire’s position and orientation. Nanoscratching of single crystalline (001)-LaAlO3 substrates is demonstrated to be extraordinarily effective in directing the self-assembly ofCe0.9Gd0.1O2−y epitaxial nanowires grown by chemical solution deposition. The local anisotropic elasticstrain field imposed by the indentation lines is responsible for the breaking of thepre-existing orientation energy degeneracy and selects the nanowires’ orientation parallel tothe lines to an extent that can reach 100%.
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