Orientation of the basal plane of single crystals of GaSe grown by vertical Bridgman technique

Abstract

In this work we establish a simple procedure for determining the orientation of the basal plane of GaSe crystals grown by the vertical Bridgman technique. For this purpose we have used X-ray techniques along with etching and observation of the surface by optical microscopy. As a result we concluded that the direction of growth is always perpendicular to the direction of greatest density <1210> which always coincides with the minor axis of the ellipse formed naturally by cleaving the cylindrical single crystals.