Abstract

Deformation and fracture mechanisms, and therefore mechanical behavior, in metals and metallic alloys with hexagonal close packed structures, such as α-Ti, strongly depend on the crystal c-axis orientation of the grains. Taking advantage of the intrinsic optical anisotropy that these structures present, a computer-aided method based on conventional reflected polarized light microscopy has been developed for c-axis orientation mapping. The application of the method on texture-free and textured commercially pure Ti is proposed for the examination of relevant crystallographic features.

Highlights

  • Crystal orientation mapping has become a popular method for the analysis of polycrystalline structures, thanks, to a great extent, to the increasingly higher accessibility to automatic diffraction techniques attached to electron microscopy in scanning mode: electron backscatter diffraction (EBSD) and transmission Kikuchi diffraction, in scanning electron microscopy; and automated crystal orientation mapping, in transmission electron microscopy

  • When dealing with birefringent structures, such as hcp, which is optically anisotropic, polarized light microscopy (PLM) produces brightness contrast according to the c-axis orientation of the examined grains

  • A new semi-automated method for crystallographic characterization of hcp metal based on reflected PLM has been presented

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Summary

Introduction

Crystal orientation mapping has become a popular method for the analysis of polycrystalline structures, thanks, to a great extent, to the increasingly higher accessibility to automatic diffraction techniques attached to electron microscopy in scanning mode: electron backscatter diffraction (EBSD) and transmission Kikuchi diffraction, in scanning electron microscopy; and automated crystal orientation mapping, in transmission electron microscopy. When dealing with birefringent structures, such as hcp, which is optically anisotropic, polarized light microscopy (PLM) produces brightness contrast according to the c-axis orientation of the examined grains.

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