Orientation dependence of void growth at triple junction of grain boundaries in nanoscale tricrystal nickel film subjected to uniaxial tensile loading

Abstract

Molecular dynamics simulation was performed in order to investigate the dependence of void growth on crystallographic orientation at the triple junction of grain boundaries in nanoscale tricrystal nickel film subjected to uniaxial tensile loading. The nucleation, the emission and the transmission of Shockley partial dislocations play a predominant role in the growth of void at the triple junction of grain boundaries. The orientation factors of various slip systems are calculated according to Schmid law. The slip systems activated in a grain of tricrystal nickel film basically conform to Schmid law which is completely suitable for a single crystal. The activated slip systems play an important role in plastic deformation of nanoscale tricrystal nickel film subjected to uniaxial tensile loading. The slip directions exhibit great difference among the activated slip systems such that the void is caused to be subjected to various stress conditions, which further leads to the difference in void growth among the tricrystal nickel films with different orientation distributions. It can be concluded that the grain orientation distribution has a significant influence on void growth at the triple junction of grain boundaries.