Abstract
The zero-field spin splitting and in-plane anisotropy in InGaAs/InP quantum wells, which originate from the inversion asymmetry between two interfaces, are discussed by a modified bond orbital model. To include the microscopic interface effect, the potential term of the bond orbital model is modified by the concept of the heuristic Hbf model. The proposed model allows flexible and convenient calculations for various growth directions. It is found that the inversion asymmetric effect strongly depends on the growth direction. The origins of the anisotropy and spin splitting on the (001)-, (111)-, and (110)-oriented quantum wells will be discussed in detail.
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