Abstract
We investigate the orientation dependence of high-order harmonic generation (HHG) in graphene by solving the semiconductor Bloch equations. The tight-binding approximation including up to the third-nearest-neighbor atoms is used to model the graphene. Our simulations show that the orientation dependence of HHG shows different patterns for different harmonics. With increasing the laser intensity, these patterns become similar except for a double-peak structure shown in lower-order harmonics. The double-peak structure appears at high laser intensity due to the contribution of the harmonic perpendicular to the laser polarization direction. The harmonic yield is decomposed as the contributions of the nearest-neighbor interaction, the second-nearest-neighbor interaction, and the third-nearest-neighbor interaction. Our results show that the harmonic yields are mainly contributed by the nearest-neighbor interaction, but the third-nearest-neighbor interaction also plays an important role and modifies the orientation dependence.
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