Abstract
AbstractUndoped and Ga‐doped ZnSiP2 crystals grown by spontaneous crystallization from nonstoichiometric melt show a pronounced dependence of electrical properties (conductivity, carrier concentration) and cathodoluminescence on the orientation of various crystal faces. Breakdown voltage measurements and Hall measurements yielded that the (112)B face is always low‐resistivity n‐type and the (112)A face is always semi‐insulating. The spectral position of the broad luminescence band observed at 80 K differs in a characteristical manner for the various crystal faces. The luminescence behaviour correlates partly with the electrical properties. The results are explained by an orientation dependence of the impurity incorporation which is reflected also in the bulk properties of the crystals.
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