Organometallic vapor phase epitaxy of GaN on Si(1 1 1) with a γ-Al 2O 3(1 1 1) epitaxial intermediate layer

Abstract

Heteroepitaxial growth of GaN on Si(1 1 1) substrate was investigated by atmospheric pressure organometallic vapor-phase epitaxy. High-quality GaN layers on Si were deposited using an epitaxially grown intermediate layer of γ-Al 2O 3. The orientation relationship was found to be GaN(0 0 0 1)/γ-Al 2O 3(1 1 1)/Si(1 1 1) and GaN[1 1 2 ̄ 0]∥ γ-Al 2 O 3[ 1 ̄ 1 0]∥ Si[ 1 ̄ 1 0] . GaN layers with (0 0 0 2) rocking curve line width of 1000 arcsec have been obtained.