Abstract
AbstractSrTiO3 thin films were deposited by low pressure organometallic chemical vapor deposition on silicon substrates using the volatile metal-organic precursors titanium isopropoxide and Sr(dipivaloylmethanate)2. Oxygen and water vapor were used as reactant gases and argon was used as a carrier gas. Growth rates ranging from 0.6–2.1 μm/hr were obtained at 650–800°C. Polycrystalline films were obtained at growth temperatures of 650–750°C, and amorphous films above 750°C. SrTiO3 films deposited on silicon substrates exhibited resistivities greater than 109 Ω-cm and dielectric constants up to 100.
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