Abstract
Herein, we describe preliminary results on organic-inorganic hybrid photoresists, capable of showing line patterns up to 16 nm under e-beam exposure studies, prepared by incorporating polyoxometalates (POMs) clusters into organic photoresist materials. Various Mo and W based clusters such as (TBA)<sub>2</sub>[Mo<sub>6</sub>O<sub>19</sub>], (TBA)<sub>5</sub>(H)[P<sub>2</sub>V<sub>3</sub>W<sub>15</sub>O<sub>62</sub>] and (TBA)<sub>4</sub>[P<sub>2</sub>Mo<sub>18</sub>O<sub>61</sub>] (where TBA = tetrabutyl ammonium counter ion) have been incorporated into PMMA matrix by mixing POM solutions and standard PMMA polymer in anisole (MW ~ 95000, MicroChem) in 1:33 w/v ratio. E-beam exposure followed by development with MIBK solutions showed that these new organic-inorganic hybrid photoresists show good line patterns upto 16 nm, which were not observed in the case of control experiments done on pure PMMA polymer resist. The observed enhancement of resist properties in the case of hybrid resists could possibly be due to a combination of features imparted to the resist by the POM clusters such as increased sensitivity, etch resistance and thermal stability.
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