Organic thin-film transistor memory with Ag floating-gate

Abstract

Organic thin-film transistor memories were realized by inserting a floating-gate layer in the Nylon 6 gate dielectrics. The transistors presented significant hysteresis behaviors and memory effect. The performance of the transistor memories, such as the memory window and the retention time, was improved greatly by using the separated silver nanoparticles instead of the silver film as the floating-gate. After the ITO source-drain electrode of the transistors treated by the oxygen plasma, the performance was further improved. The operation mechanism of the presented transistor memories was also provided and discussed.