Abstract
Poly(vinylidene fluoride) (PVDF) was used as an organic spacer to fabricate spin-valve devices for the first time. Their magnetoresistance (MR) effects with different layer numbers of PVDF were investigated at both room and low temperatures. The device resistances and MR ratios increase with decreasing measurement temperature. It is noted that the MR ratios at room temperature are over 2% and 0.5% for devices with 3 layers and 13 layers of PVDF, respectively.
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