Organic single-crystal transistors with secondary gates on source and drain electrodes

Abstract

Rubrene and tetracyanoquinodimethane single-crystal transistors are fabricated incorporating secondary gates (split gates) on source and drain electrodes to reduce the interfacial barriers at the metal/semiconductor contacts. Separating the effect of the injection barriers, the intrinsic carrier transport in the semiconductor channels is extracted for the p-type rubrene crystal transistors and the n-type tetracyanoquinodimethane crystal transistors. The transconductance of the tetracyanoquinodimethane devices is drastically improved by activating the split-gate electrodes, indicating significant injection barriers in the n-type transistors. The result demonstrates that the technique is useful to improve transistor performance when it is restricted by the injection barriers.