Abstract

We reviewed recent advances in high-performance organic field-effect transistors (OFETs) based on organic semiconductor/insulator polymer blends. Fundamental aspects of phase separation in binary blends are discussed with special attention to phase-separated microstructures. Strategies for constructing semiconductor, semiconductor/dielectric, or semiconductor/passivation layers in OFETs by blending organic semiconductors with an insulating polymer are discussed. Representative studies that utilized such blended films in the following categories are covered: vertical phase-separation, processing additives, embedded semiconductor nanowires.

Highlights

  • Organic field-effect transistors (OFETs) have received much attention as switching elements in display backplanes [1,2,3,4,5,6,7,8,9,10,11,12,13,14]

  • A vertically phase-separated structure in organic semiconductor/insulator polymer blends can be used as an active layer in organic field-effect transistors (OFETs) and this can be achieved by controlling solubility, surface energy, and/or substrate conditions

  • We introduced the use of organic semiconductor/insulator polymer blends in bottom-gate OFETs

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Summary

Introduction

Organic field-effect transistors (OFETs) have received much attention as switching elements in display backplanes [1,2,3,4,5,6,7,8,9,10,11,12,13,14]. If low stability is a critical drawback for commercialization of OFETs, OFETs may be used in disposable electronics To achieve this goal, the solution process is indispensable for reducing processing costs. Various materials with different functions can be blended to fine tune device performance This blended approach is common when preparing active layers in organic photovoltaic solar cells (OPVs) or ambipolar FETs [17,18,19,20]. In such devices, device performance is typically determined by phase-separation characteristics in n-type semiconductor/p-type semiconductor polymer blends. A brief summary is provided in the conclusion section

Fundamental Aspects of Phase Separation
Vertical Phase-Separation
Processing Additive
Embedded Semiconductor Nanowires
Findings
Conclusions
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