Abstract
We show that the performance of pentacene transistors can be significantly improved by maximizing the interfacial area at single walled carbon nanotube (SWCNT)/pentacene. The interfacial areas are varied by anchoring short SWCNTs of different densities (0-30/μm) to the Pd electrodes. The mobility average is increased three, six and nine times for low, medium and high SWCNT densities, respectively, compared to the devices with zero SWCNT. The current on-off ratio and on-current are increased up to 40 times and 20 times with increasing the SWCNT density. We explain the improved device performance using reduced barrier height of SWCNT/pentacene interface.
Highlights
Organic field-effect transistors (OFETs) have attracted tremendous attention due to their flexibility, transparency, easy processiblity and low cost of fabrication [1,2,3,4]
Our study shows that a few nanotubes in the electrode can improve the OFET device performance, significant improvement can be achieved by maximizing single walled carbon nanotube (SWCNT)/organic semiconductors (OSCs) interfacial area
The improved OFET performance can be explained due to a reduced barrier height of SWCNT/pentacene interface compared to metal/pentacene interface which provides more efficient charge injection pathways with increased SWCNT/pentacene interfacial area
Summary
Organic field-effect transistors (OFETs) have attracted tremendous attention due to their flexibility, transparency, easy processiblity and low cost of fabrication [1,2,3,4]. From the electronic transport measurements of 40 devices, we show that the average saturation mobility of the devices increased from 0.02 for zero SWCNT to 0.06, 0.13 and 0.19 cm2/Vs for low (1-5 /μm), medium (10-15 /μm) and high (25-30 /μm) SWCNT density in the electrodes, respectively.
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